Analysis of a p-i-n Diode Circuit at Radio Frequency Using an Electromagnetic-Physics-Based Simulation Method

Embracing the era of higher operating frequencies, expanding functionality, and increased integration scale, modern circuit design relies more on accurate prediction electromagnetic (EM) effects resulting from undesired radiation mutual coupling digital electronic devices. In this paper, an electromagnetic-physics-based simulation method is proposed, to simulate semiconductor devices circuits. It utilizes physics-based analyze in a incorporates into (e.g., finite difference time domain (FDTD)), at high frequency. To validate proposed method, sample numerical results circuits containing commercial p-i-n diode with model number mot_bal99lt1 radio frequency (RF) were obtained compared measurement data. The comparison showed good agreement between two sets data, which validated feasibility accuracy algorithm. Moreover, can provide useful physical mechanism for understanding